Response to "Comment on 'Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection'"
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (12) , 396-397
- https://doi.org/10.1109/edl.1982.25612
Abstract
We believe that V. Zieren, S. Kordic, and S. hliddelhoek in their comment [ibid., EDL-3, pp, 394-395, Dec. 1982] wherein they claim a hypothetical assumption that "electron injection current would induce a Hall voltage in the base region of our device," is invalid. It is the majority carrier flow, not minority carriers, which give rise to the Hall effect in the various regions. As indicated above, these effects result in emitter-injection modulation leading to differential collector currents which are consistent with experimental results.Keywords
This publication has 4 references indexed in Scilit:
- Comment on "Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection"IEEE Electron Device Letters, 1982
- Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflectionIEEE Electron Device Letters, 1982
- Magnetic-field-sensitive multicollector n-p-n transistorsIEEE Transactions on Electron Devices, 1982
- Differential amplification magnetic sensorIEEE Transactions on Electron Devices, 1972