The work function difference of the MOS-system with aluminium field plates and polycrystalline silicon field plates
- 31 August 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (8) , 769-775
- https://doi.org/10.1016/0038-1101(74)90023-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- High-Temperature Annealing of Oxidized Silicon SurfacesJournal of the Electrochemical Society, 1971
- Interface Barrier Energy Determination from Voltage Dependence of Photoinjected CurrentsJournal of Applied Physics, 1970
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Photoemission of Electrons from-Type Degenerate Silicon into Silicon DioxidePhysical Review B, 1966
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Photoemission of Electrons from Metals into Silicon DioxideJournal of Applied Physics, 1966
- Photoemission of Electrons from Silicon and Gold into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962