Dynamic Switching Characteristics of Photoluminescence by an Electric Field in AlGaAs Quantum Well Structures
- 1 August 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (8A) , L1313
- https://doi.org/10.1143/jjap.26.l1313
Abstract
Transient photoluminescence measurements for pulsed electric field at room temperature on AlGaAs quantum well structures have been carried out to clarify the characteristics of luminescence switching by an electric field. With our method, the radiative lifetime and nonradiative lifetime can be separately evaluated. Luminescence switching by electric field shows a high speed capability that is free from lifetime limitation. Based on the relationships between radiative and nonradiative processes, the intensity modulation of luminescence under the condition of a constant carrier density is demonstrated.Keywords
This publication has 9 references indexed in Scilit:
- AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced DisorderingJapanese Journal of Applied Physics, 1987
- Field-induced lifetime enhancement and ionization of excitons in GaAs/AlGaAs quantum wellsSuperlattices and Microstructures, 1986
- Lifetime Enhancement of Two-Dimensional Excitons by the Quantum-Confined Stark EffectPhysical Review Letters, 1985
- Transient Response of Photoluminescence for Electric Field in a GaAs/Al0.7Ga0.3As Single Quantum Well: Evidence for Field-Induced Increase in Carrier Life TimeJapanese Journal of Applied Physics, 1985
- Electric-field-induced refractive index variation in quantum-well structureElectronics Letters, 1985
- Electric field induced decrease of photoluminescence lifetime in GaAs quantum wellsApplied Physics Letters, 1985
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984
- Quantum Mechanical Size Effect Modulation Light Sources– A New Field Effect Semiconductor Laser or Light Emitting DeviceJapanese Journal of Applied Physics, 1983
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982