A high-density NAND EEPROM with block-page programming for microcomputer applications
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 25 (2) , 417-424
- https://doi.org/10.1109/4.52165
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An experimental 4 Mb CMOS EEPROM with a NAND structured cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An experimental 4-Mbit CMOS EEPROM with a NAND-structured cellIEEE Journal of Solid-State Circuits, 1989
- A high density NAND EEPROM with block-page programming for microcomputer applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1989
- New ultra high density EPROM and flash EEPROM with NAND structure cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987