Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE
- 1 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 739-742
- https://doi.org/10.1016/s0022-0248(00)00814-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Growth and properties of AlxGa1–xN epitaxial layersPhysica Status Solidi (a), 1978