Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

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Abstract
Cold cathodestructures have been fabricated using AlN and graded AlGaNstructures (deposited on n -type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO 2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes.Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10–100 nA and required grid voltages ranging from 20–110 V. The grid currents were typically 1 to 10 4 times the collector currents.