Thermal behavior and stability of room-temperature continuous AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on Si

Publisher Website
Google Scholar
Abstract
Data are presented on the thermal characteristics of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) diode lasers grown on Si substrates. Continuous 300‐K operation for over 10 h is demonstrated for lasers mounted with the junction side away from the heat sink (‘‘junction‐up’’) and the heat dissipated through the Si substrate. ‘‘Junction‐up’’ diodes that are grown on Si substrates have measured thermal impedances that are 38% lower than those grown on GaAs substrates, with further reductions possible. Thermal impedance data on ‘‘junction‐down’’ diodes are presented for comparison. Measured values are consistent with calculated values for these structures. Low sensitivity of the lasing threshold current to temperature is also observed, as is typical for QWH lasers, with T0 values as high as 338 °C.