High-extinction-ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (6) , 580-582
- https://doi.org/10.1109/68.141974
Abstract
The local bandgap energy of an InGaAs/InGaAsP multiple quantum well (MQW) structure was precisely adjusted by in-plane Eg control in one-step selective area metalorganic chemical vapor deposition (MOCVD) growth. The technique was then applied to an MQW electroabsorption-modulator integrated distributed feedback (DFB) laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.Keywords
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