NEW INSTABILITY CRITERION FOR RECOMBINATION WAVE DIODES
- 15 June 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (12) , 544-546
- https://doi.org/10.1063/1.1653532
Abstract
We have introduced a new instability criterion for a recombination wave diode, e.g., golddoped siliconp +‐i‐n + diode, irrespective of the type of injecting contacts. This criterion gives a class of sufficient conditions to obtain open‐circuit oscillations, and substitutes the presently available instability condition. The theoretical results show a satisfactory agreement with known experimental data.Keywords
This publication has 3 references indexed in Scilit:
- Double injection in semiconductors heavily doped with deep two-level trapsSolid-State Electronics, 1970
- RECOMBINATION WAVES IN Au-DOPED SiApplied Physics Letters, 1970
- Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodesSolid-State Electronics, 1967