RECOMBINATION WAVES IN Au-DOPED Si
- 15 February 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (4) , 181-185
- https://doi.org/10.1063/1.1653153
Abstract
Theoretical computation of recombination waves in Au‐doped Si is reconsidered introducing new expressions of the carrier lifetimes, deduced from a linearized theory of the generation‐recombination process kinetics. The comparison with previous theoretical and experimental papers is given. The role of the temperature and dc electric field on the instability condition is examined.Keywords
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