Characterization of vapor grown (001) GaAs1−xPx layers by selective photo-etching
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 250-255
- https://doi.org/10.1016/0022-0248(75)90138-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The interpretation of dislocation contrast in x-ray topographs of GaAs1−x PxJournal of Applied Physics, 1974
- Selective Photoetching of Gallium ArsenideJournal of the Electrochemical Society, 1972
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Dislocations in GaAs17−xPxJournal of Applied Physics, 1969
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965