Acceptor profiles obtained by diffusive redistribution of implanted impurities during annealing

1 July 1973

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 23 (1) , 49-51
https://doi.org/10.1063/1.1654734

Abstract

Damage‐enhanced diffusion and annealing is examined as a means for producing the observed redistribution of boron that is implanted into Si at 77 °K and then annealed at 650 °C. A model incorporating spatial variation of both the diffusion coefficient and the final electrical activity is found to fit the experimental data with reasonable accuracy.

Keywords

This publication has 7 references indexed in Scilit:

Estimation of impurity profiles in ion-implanted amorphous targets using joined half-Gaussian distributions
Applied Physics Letters, 1973
Ion implantation in semiconductors—Part II: Damage production and annealing
Proceedings of the IEEE, 1972
Xenon m X-ray spectra from ion-atom collisions
Physics Letters A, 1971
Acceptor profiles in silicon implanted with boron at 77°K
Physics Letters A, 1971
Spatial distribution of energy deposited into atomic processes in ion-implanted silicon
Radiation Effects, 1970
PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200-keV BORON IONS
Applied Physics Letters, 1969
POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON
Applied Physics Letters, 1969