Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

This publication has 15 references indexed in Scilit:

• Parameter sensitivity for optimal design of 65nm node double gate SOI transistors
  Solid-State Electronics, 2005
• Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance
  IEEE Electron Device Letters, 2003
• On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
  Physica E: Low-dimensional Systems and Nanostructures, 2003
• Monte Carlo simulation and measurement of nanoscale n-MOSFETs
  IEEE Transactions on Electron Devices, 2003
• Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology
  Solid-State Electronics, 2002
• Benchmarking Macroscopic Transport Models for Nanotransistor TCAD
  Journal of Computational Electronics, 2002
• Electron transport in a model Si transistor
  Solid-State Electronics, 2000
• Monte Carlo analysis of semiconductor devices: The DAMOCLES program
  IBM Journal of Research and Development, 1990
• A physically based mobility model for numerical simulation of nonplanar devices
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
• High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level
  IEEE Electron Device Letters, 1988