On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
- 1 July 2003
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 19 (1-2) , 33-38
- https://doi.org/10.1016/s1386-9477(03)00290-x
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Extreme scaling with ultra-thin Si channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Application of semiclassical device simulation to trade-off studies for sub-0.1 μm MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- MOSFET modeling into the ballistic regimePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technologySolid-State Electronics, 2002
- Electron transport in a model Si transistorSolid-State Electronics, 2000
- Monte Carlo analysis of semiconductor devices: The DAMOCLES programIBM Journal of Research and Development, 1990
- A physically based mobility model for numerical simulation of nonplanar devicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967