Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Optimized terminal current calculation for Monte Carlo device simulationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1997
- Transient analysis of CML inverter using Monte Carlo simulationsSolid-State Electronics, 1996
- Analytic accounting for carrier velocity overshoot in advanced BJT's for circuit simulationIEEE Transactions on Electron Devices, 1993
- A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETsIEEE Transactions on Electron Devices, 1992
- Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go?Published by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhysical Review B, 1988
- Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 KIEEE Electron Device Letters, 1988
- VA-6 two-dimensional simulation of latch-up in CMOS structureIEEE Transactions on Electron Devices, 1982
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972