Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs

This publication has 7 references indexed in Scilit:

• Monte Carlo analysis of semiconductor devices: The DAMOCLES program
  IBM Journal of Research and Development, 1990
• Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
  Physical Review B, 1988
• Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel
  Japanese Journal of Applied Physics, 1988
• Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K
  IEEE Electron Device Letters, 1988
• Unpinned GaAs MOS capacitors and transistors
  IEEE Electron Device Letters, 1988
• High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level
  IEEE Electron Device Letters, 1988
• Physics at the limits of VLSI scaling
  AIP Conference Proceedings, 1984