Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel

1 October 1988

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 27 (10A) , L1958-1961
https://doi.org/10.1143/jjap.27.l1958

Abstract

A novel principle is suggested for the optimum design of deep-submicron channel MOSFET operated at liquid-nitrogen temperature. Current-voltage characteristics of MOSFET are scaled down in proportion to operation temperature, while the distribution of the mobile carrier is kept constant. The results of a two-dimensional simulation confirm our scaling theory. A combination scaling law is also suggested which comprises the temperature-scaling law and a dimensional scaling law.

Keywords

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