Nucleation control of silicon on silicon oxide for low-temperature CVD and silicon selective epitaxy
- 31 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 240-244
- https://doi.org/10.1016/0022-0248(90)90520-u
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environmentApplied Physics Letters, 1989
- The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: III . The System at Low TemperaturesJournal of the Electrochemical Society, 1981
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973
- Rate equation approaches to thin film nucleation kineticsPhilosophical Magazine, 1973
- Selective epitaxy using silane and germaneJournal of Crystal Growth, 1971
- Selective Growth of Epitaxial Silicon and Gallium ArsenideJournal of the Electrochemical Society, 1971
- Migration and capture processes in heterogeneous nucleation and growth: II. Comparison with experimentSurface Science, 1970
- Nucleation of metal crystals on ionic surfacesSurface Science, 1964