Design of a positive resist for projection lithography in the mid‐UV
- 1 December 1983
- journal article
- research article
- Published by Wiley in Polymer Engineering & Science
- Vol. 23 (18) , 1004-1011
- https://doi.org/10.1002/pen.760231806
Abstract
The design, synthesis, formulation, and process optimization of a new mid‐UV resist are described. The synthesis of a spectrally matched sensitizer was guided by semiempirical quantum mechanical calculations that predict the effect of structural changes on optical absorption characteristics. The formulation was guided by computer profile simulation studies and the process development by a response surface analytical procedure. These techniques allowed formulation optimization to be achieved on the basis of an understanding of the complex interactions between the resist dissolution response functions and the modulation transfer function of the exposure tool for which the resist was designed.Keywords
This publication has 5 references indexed in Scilit:
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- Performance limits in 1:1 UV projection lithographyJournal of Vacuum Science and Technology, 1979
- A general simulator for VLSI lithography and etching processes: Part I—Application to projection lithographyIEEE Transactions on Electron Devices, 1979
- Photochemical Decomposition Mechanisms for AZ-Type PhotoresistsIBM Journal of Research and Development, 1979