Transition regions in epitaxial films
- 16 November 1977
- journal article
- review article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 44 (1) , 11-43
- https://doi.org/10.1002/pssa.2210440102
Abstract
No abstract availableThis publication has 49 references indexed in Scilit:
- Formation and properties of transition layers in epitaxial filmsJournal of Crystal Growth, 1975
- On the Interaction of a Screw Dislocation with Interfaces during Thin Films GrowthPhysica Status Solidi (a), 1975
- Homoepitaxial Growth of Silicon Films by Ion SputteringJapanese Journal of Applied Physics, 1974
- Epitaxial InterfacesPublished by Elsevier ,1973
- Structure and properties of transition layers formed in the epitaxy processPhysica Status Solidi (a), 1972
- Über die Epitaxie von Schichten der Verbindungshalbleiter und zur Bedeutung der Heteroepitaxie in der HalbleiterforschungCrystal Research and Technology, 1972
- The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniquesJournal of Crystal Growth, 1971
- Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped SubstrateJapanese Journal of Applied Physics, 1970
- A theoretical analysis of the decomposition kinetics of supersaturated solid solutionsUspekhi Fizicheskih Nauk, 1961
- The spiral growth of crystalsUspekhi Fizicheskih Nauk, 1961