Formation and properties of transition layers in epitaxial films
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 103-112
- https://doi.org/10.1016/0022-0248(75)90119-0
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- On the Interaction of a Screw Dislocation with Interfaces during Thin Films GrowthPhysica Status Solidi (a), 1975
- Heteroepitaxy of germanium thin films on silicon by ion sputteringJournal of Crystal Growth, 1974
- Homoepitaxial Growth of Silicon Films by Ion SputteringJapanese Journal of Applied Physics, 1974
- Step motion of the growth surface in the initial stage of semiconductor film epitaxy with ion sputteringThin Solid Films, 1974
- Structure and properties of transition layers formed in the epitaxy processPhysica Status Solidi (a), 1972
- Über die Epitaxie von Schichten der Verbindungshalbleiter und zur Bedeutung der Heteroepitaxie in der HalbleiterforschungCrystal Research and Technology, 1972
- The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniquesJournal of Crystal Growth, 1971
- Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped SubstrateJapanese Journal of Applied Physics, 1970
- Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon CrystalsJapanese Journal of Applied Physics, 1970
- Growth and Properties of Thin Germanium FilmsJournal of the Electrochemical Society, 1970