Radiation Induced Leakage Currents in Silicon on Sapphire MOS Transistors
- 1 January 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 23 (6) , 1586-1589
- https://doi.org/10.1109/TNS.1976.4328544
Abstract
Measurements are reported in which photodepopulation and thermal bleaching techniques have been applied to the study of radiation induced trapped positive charge in the Al2O3 substrate of n-channel MOS/SOS devices. Photodepopulation data indicates an optical depth for the hole traps of 2.5 eV. Thermal bleaching studies yield a corresponding thermal depth of 0.75 eV. Some preliminary thermally stimulated current measurements which reveal additional low temperature stable traps are also reported.Keywords
This publication has 8 references indexed in Scilit:
- Optical studies of the back-channel leakage in N-channel MOSFET on silicon-on-sapphire (SOS)Applied Physics Letters, 1976
- Radiation induced leakage current in N-channel SOS transistorsIEEE Transactions on Nuclear Science, 1974
- Radiation induced charge trapping at the silicon sapphire substrate interfaceIEEE Transactions on Nuclear Science, 1974
- Transient Photocurrents in SOS StructuresIEEE Transactions on Nuclear Science, 1973
- The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS DevicesIEEE Transactions on Nuclear Science, 1973
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- The evaluation of electron trapping parameters from conductivity glow curves in cadmium sulphideBritish Journal of Applied Physics, 1964
- Radiation Effects in Silica at Low TemperaturesPhysical Review B, 1959