Optical study of ZnSe and (Zn,Mn)Se MBE layers on GaAs
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 705-708
- https://doi.org/10.1016/0022-0248(90)91063-v
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Raman Scattering Measurements of Strains in ZnSe Epitaxial Films on GaAsJapanese Journal of Applied Physics, 1988
- Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer Thickness and Growth TemperatureJapanese Journal of Applied Physics, 1988
- Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and SuperlatticesPhysica Status Solidi (b), 1988
- Effects of ZnSe epitaxial growth on the surface properties of GaAsApplied Physics Letters, 1987
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs SubstratesJapanese Journal of Applied Physics, 1987
- Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayersApplied Physics Letters, 1987
- The study of energy gap in MnxZn1−xSeSolid State Communications, 1986
- Summary Abstract: (100)‐oriented wide gap II–VI superlatticesJournal of Vacuum Science & Technology B, 1986
- Deformation Potentials of k = 0 States of Tetrahedral SemiconductorsPhysica Status Solidi (b), 1984
- The study of the s-d type exchange interaction in Zn1−xMnxSe mixed crystalsSolid State Communications, 1983