Ion beams in semiconductor physics and technology
- 1 January 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 63 (1-2) , 1-13
- https://doi.org/10.1016/0168-583x(92)95159-o
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Nuclear muscopy — Elemental mapping using high-energy ion beam techniquesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Trace-impurity detection by Rutherford backscattering and nuclear resonance reactionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Measurements of the accumulation of hydrogen at the silicon-silicon-dioxide interface using nuclear reaction analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- A silicon-on-insulator structure formed by implantation of megaelectronvolt oxygenMaterials Science and Engineering: B, 1989
- Current status of the technology of silicon separated by implantation of oxygenMaterials Science and Engineering: B, 1989
- Proton-irradiated silicon: Complete electrical characterization of the induced dominant deep defects after long-term annealingMaterials Science and Engineering: B, 1989
- The heavy-ion microprobe at GSI — Used for single ion micromechanicsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Channeling analysis of strain in superlatticesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Study of Si self-diffusion by nuclear techniquesPhysics Letters A, 1983
- The fabrication of high quality silicon junction detectors by low energy ion implantationThe European Physical Journal A, 1967