Current status of the technology of silicon separated by implantation of oxygen
- 28 February 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 2 (1-3) , 111-122
- https://doi.org/10.1016/0921-5107(89)90085-8
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantationApplied Physics Letters, 1988
- CMOS/SIMOX devices having a radiation hardness of 2 Mrad(Si)Electronics Letters, 1987
- Mechanisms of buried oxide formation by ion implantationApplied Physics Letters, 1987
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI FilmsIEEE Transactions on Nuclear Science, 1986
- New conditions for synthesizing SOI structures by high dose oxygen implantationJournal of Crystal Growth, 1985
- Microstructure of silicon implanted with high dose oxygen ionsApplied Physics Letters, 1985
- Deep Level Luminescence Ralated to Thermal Donors in SiliconJapanese Journal of Applied Physics, 1983
- Thermally-induced defects in silicon containing oxygen and carbonPhysica Status Solidi (a), 1981
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978