The Strong Degradation of 30 Å Gate Oxide Integrity Contaminated by Copper
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 148 (4) , F73-F76
- https://doi.org/10.1149/1.1357182
Abstract
A much higher leakage current, a lower breakdown effective field, a poorer charge-to-breakdown, and worse stress-induced leakage current are observed in ultrathin 30 Å oxides even at a low Cu contamination of 10 ppb. The strong degradation of the ultrathin gate oxide integrity can be explained by the tunneling barrier lowering and the increased interface trap tunneling due to the presence of Cu in the oxide and at the oxide-Si interface. © 2001 The Electrochemical Society. All rights reserved.Keywords
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