Copper contamination effects in 0.5 μm BiCMOS technology
- 1 January 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 33 (1-4) , 211-216
- https://doi.org/10.1016/s0167-9317(96)00047-0
Abstract
No abstract availableKeywords
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- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964