The effect of native oxide on thin gate oxide integrity
- 1 November 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (11) , 426-428
- https://doi.org/10.1109/55.728901
Abstract
We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using HF-vapor treated and H/sub 2/ baked processes. Furthermore, an extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm/sup 2/ and a large charge injection of 7.9/spl times/10/sup 4/ C/cm/sup 2/. The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole traps.Keywords
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