High reflectivity, low resistance Te doped AlGaAsSb/AlAsSbBragg mirror
- 10 April 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (8) , 716-717
- https://doi.org/10.1049/el:19970483
Abstract
The authors report a high quality n-type Te-doped AlGaAsSb/AlAsSb Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 99.8% reflectivity with a 190 nm stopband width centred at 1.51 µm is obtained. An average voltage drop of 44 mV per period at a current density of 1 kA/cm2 is observed for a mean electron concentration of ~3.5 × 1018 cm-3.Keywords
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