N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
- 1 July 1988
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (4) , 297-303
- https://doi.org/10.1007/bf02652109
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Molecular beam epitaxyReports on Progress in Physics, 1985
- The influence of growth conditions on selenium incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1984
- Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982
- S-Doping of MBE-GaSb with H2S GasJapanese Journal of Applied Physics, 1981
- Molecular Beam Epitaxy of GaSb and GaSbxAs1-xJapanese Journal of Applied Physics, 1978
- ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’Applied Physics Letters, 1978
- Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsyApplied Physics Letters, 1977
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Partial Pressures in Equilibrium with Group IV Tellurides. I. Optical Absorption Method and Results for PbTeThe Journal of Chemical Physics, 1964
- Experimental Investigation of Conduction Band of GaSbPhysical Review B, 1960