Optical Degradation of a-Si:H films with Different Morphology

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Abstract
The optical degradation (Staebler-Wronski (SW) effect) of a-Si:H films prepared by plasma CVD has been studied in connection with the morphological inhomogeneity of the films. The relative degradation rate of cubic photoconductivity α widely varied with deposition substrate temperature T s and had its maximum at T s=200∼250°C. In the films of both the lower and higher T s, α decreased due to the increase of stable dangling bonds in the former and the decrease of weak bonds in the latter. The SW effect was hardly observed in µc-Si:H deposited from highly diluted silane with hydrogen.
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