Ohmic contacts on ion-implanted n-type GaAs layers
- 1 June 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6) , 4466-4468
- https://doi.org/10.1063/1.326407
Abstract
Contact resistance of Ohmic electrodes formed on either Se- or (Se+Ga) -implanted n-type GaAs layers was studied. Experimental results have shown that a low specific-contact resistance of 2.9×10−7 Ω cm2 can be achieved on GaAs layers having a maximum carrier concentration of 1.8×1019 cm−3, which have been formed by a dual-species (4.4×1014 cm−2 Se+ 5.0×1014 cm−2 Ga) implantation in Cr-doped semi-insulating GaAs heated to 400 °C and by subsequent annealing at 950 °C using an oxygen-free CVD Si3N4 layer as an encapsulant.This publication has 9 references indexed in Scilit:
- Chemical Vapor Deposition of Silicon Nitride: Encapsulant Layers for Annealing Gallium ArsenideJournal of the Electrochemical Society, 1978
- Annealing of Se-implanted GaAs with an oxygen-free CVD Si3N4 encapsulantJournal of Applied Physics, 1978
- Improved GaAs MESFET with a thin i n s i t u buffer grown by liquid phase epitaxyApplied Physics Letters, 1978
- Study of Encapsulants for Annealing GaAsJournal of the Electrochemical Society, 1977
- Improved noise performance of GaAs MESFET's with selectively ion-implanted n+source regionsIEEE Transactions on Electron Devices, 1977
- Selenium implantation in GaAsSolid-State Electronics, 1977
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Specific contact resistance of ohmic contacts to gallium arsenideSolid-State Electronics, 1972
- Models for contacts to planar devicesSolid-State Electronics, 1972