Annealing of Se-implanted GaAs with an oxygen-free CVD Si3N4 encapsulant
- 1 August 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (8) , 4571-4573
- https://doi.org/10.1063/1.325472
Abstract
Auger electron spectroscopy and differential Hall measurements have been employed to investigate CVD Si3N4 layers as encapsulants for annealing of Se‐implanted GaAs. Carrier concentrations exceeding 4×1018 cm−3 can be achieved by implanting 100‐keV Se ions into Cr‐doped semi‐insulating GaAs heated at 400 °C and by subsequent annealing at 900 °C using an oxygen‐free CVD Si3N4 encapsulant, in which out‐diffusions of Ga and As are sufficiently depressed.This publication has 9 references indexed in Scilit:
- Study of Encapsulants for Annealing GaAsJournal of the Electrochemical Society, 1977
- A double-layered encapsulant for annealing ion-implanted GaAs up to 1100 °CApplied Physics Letters, 1977
- Low-dose n-type ion implantation into Cr-doped GaAs substratesSolid-State Electronics, 1977
- Selenium implantation in GaAsSolid-State Electronics, 1977
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Anodic Oxidation of GaAs as a Technique to Evaluate Electrical Carrier Concentration ProfilesJournal of the Electrochemical Society, 1975
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972
- OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDEApplied Physics Letters, 1970
- Properties of Si[sub x]O[sub y]N[sub z] Films on SiJournal of the Electrochemical Society, 1968