Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering
- 7 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (6) , 540-542
- https://doi.org/10.1063/1.101848
Abstract
Integrated external cavity GaAs/AlGaAs single quantum well lasers were fabricated by selective quantum well disordering. Lasers with 2.07-mm-long passive sections and 0.48-mm-long active sections had threshold currents of 33 mA, compared to 9.8 mA for lasers without passive sections. Lasing data indicate a residual modal loss of 11 cm−1 in the passive sections, consistent with direct waveguide loss measurements. Control composite structures with a nondisordered quantum well in the passive sections showed significantly higher threshold currents and a large red shift of as much as 11.4 nm in the lasing wavelength compared to lasers without a passive cavity. This red shift is the main reason for the reduced resonant losses in integrated external cavity lasers with a nondisordered quantum well in the passive section.Keywords
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