Reduced optical waveguide losses of a partially disordered GaAs/AlGaAs single quantum well laser structure for photonic integrated circuits
- 31 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (18) , 1693-1695
- https://doi.org/10.1063/1.99799
Abstract
We present TE and TM waveguide loss measurements of partially disordered GaAs/AlGaAs quantum well separate confinement laser structures. Disordering is accomplished by silicon ion implanation and subsequent annealing. Propagation losses as low as 9 cm−1 are observed at the lasing wavelength of the corresponding untreated laser wafer. The waveguides are shown to be compatible with fabrication and dimensional requirements of high quality semiconductor lasers; ridge waveguide lasers fabricated in unimplanted portions of the same wafer exhibit threshold currents of only 8 mA. The results show that impurity-induced quantum well disordering is suitable for monolithic integration of low-threshold quantum well lasers and transparent optical waveguides.Keywords
This publication has 12 references indexed in Scilit:
- Birefringent channel waveguides defined by impurity-induced superlattice disorderingApplied Physics Letters, 1988
- Chirp and cw linewidth measurements of integrated external cavity lasersApplied Physics Letters, 1988
- Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity-induced disorderingApplied Physics Letters, 1987
- Kinetics of silicon-induced mixing of AlAs-GaAs superlatticesApplied Physics Letters, 1987
- Edge- and surface-emitting distributed Bragg reflector laser with multiquantum well active/passive waveguidesApplied Physics Letters, 1987
- High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windowsApplied Physics Letters, 1986
- Dose-dependent mixing of AlAs-GaAs superlattices by Si ion implantationApplied Physics Letters, 1986
- Two-wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wellsApplied Physics Letters, 1986
- Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disorderingApplied Physics Letters, 1984
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981