Theoretical study of relaxation at the (110) Ge-GaAs interface
- 31 January 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 25 (4) , 225-227
- https://doi.org/10.1016/0038-1098(78)90218-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Electronic structure at an abrupt GaAs–Ge interfaceJournal of Vacuum Science and Technology, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965