Self-Interstitial Injection Effects on Carbon Diffusion in Silicon At High Temperatures
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Evidences that P diffusion in Si is assisted mainly by vacanciesApplied Physics Letters, 1985
- Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystalsApplied Physics Letters, 1985
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- Enhanced Carbon Diffusion in Silicon During 900°0 AnnealingMRS Proceedings, 1984
- The Influence of Point Defects on Diffusion and Gettering in SiliconMRS Proceedings, 1984
- The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in SiliconJournal of the Electrochemical Society, 1981