Evidences that P diffusion in Si is assisted mainly by vacancies
- 1 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9) , 962-964
- https://doi.org/10.1063/1.95944
Abstract
A reexamination of some experimental results, including very high concentration phosphorus diffusion with self-interstitial injection, leads to the conclusion that P diffusion is assisted mainly by vacancies. This point is also strengthened by a simple calculation showing that the dominant defect for P diffusion plays the minor role in self-diffusion.Keywords
This publication has 11 references indexed in Scilit:
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- Effects of phosphorus diffusion on growth and shrinkage of oxidation-induced stacking faultsJournal of Applied Physics, 1984
- Dopant diffusion in silicon: A consistent view involving nonequilibrium defectsJournal of Applied Physics, 1984
- Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in siliconApplied Physics Letters, 1984
- HREM of SiP precipitates at the (111) silicon surface during phosphorus predepositionUltramicroscopy, 1984
- Silicon self-interstitial supersaturation during phosphorus diffusionApplied Physics Letters, 1983
- Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kineticsJournal of Applied Physics, 1982
- Interstitial supersaturation near phosphorus-diffused emitter zones in siliconApplied Physics Letters, 1979
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968