Novel infrared detector concept utilizing controlled epitaxial doping profiles
- 29 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (26) , 3298-3300
- https://doi.org/10.1063/1.106725
Abstract
A novel infrared detector concept is proposed and experimentally demonstrated. Because of the flexibility provided by modern epitaxial growth techniques, we use thin heavily doped Si layers for infrared absorption via free-carrier-related processes, and the active region is sandwiched in a p-n junction. Silicon-based materials for long-wavelength infrared applications are highly desirable because of the possibilities for advanced Si circuit technology.Keywords
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