Properties of doped silicon and Germanium infrared detectors
- 1 January 1984
- journal article
- Published by Elsevier in Progress in Quantum Electronics
- Vol. 9 (3) , 149-257
- https://doi.org/10.1016/0079-6727(84)90001-6
Abstract
No abstract availableThis publication has 67 references indexed in Scilit:
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