Linear electro-optic effects in zincblende-type semiconductors: Key properties of InGaAsP relevant to device design

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Abstract
General expressions are derived for the dispersion of linear electro-optic coefficients in terms of electric-field-induced modulations of the electronic energy-band structures. The theoretical predictions are compared with existing linear electro-optic dispersion data in materials of a number of the II-VI and III-V binary compounds below the direct-band edge. It is found that the calculations show a quite good agreement with these experimental data. This model is applied to In1−x Gax Asy P1−y quaternaries lattice matched to InP. The dispersion of the nonlinear optical (optical rectification) coefficients is also obtained on the basis of this model. The present results allow us to design a wide variety of optoelectronic devices.