Investigation of the amorphization process in ion implanted AIIIBV compounds
- 1 January 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 63 (1-2) , 47-51
- https://doi.org/10.1016/0168-583x(92)95166-o
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Radiation damage and optical properties of Ar+-implanted GaPJournal of Applied Physics, 1991
- Transmission electron microscopy investigation of the damage produced in individual displacement cascades in GaAs and GaPNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Defect production in ion implanted GaAs, GaP and InPNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Defect production during ion implantation of various AIIIBV semiconductorsJournal of Applied Physics, 1989
- Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Investigations of Radiation Damage Production in Ion Implanated SiliconPhysica Status Solidi (a), 1982
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAsRadiation Effects, 1980
- Criteria for bombardment-induced structural changes in non-metallic solidsRadiation Effects, 1975