SiGe technology requirements for millimeter-wave applications
- 23 December 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper provides an overview, in which SiGe-HBT device and process features are important from a designer's point of view, to enable successful circuit implementations at mm-wave frequencies.Keywords
This publication has 5 references indexed in Scilit:
- Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF designsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-Frequency Bipolar TransistorsPublished by Springer Nature ,2003
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technologyIEEE Electron Device Letters, 2002
- Coplanar passive elements on Si substrate for frequencies up to 110 GHzIEEE Transactions on Microwave Theory and Techniques, 1998
- High-frequency characterization of heterojunction bipolar transistors using numerical simulationIEEE Transactions on Electron Devices, 1989