High-frequency characterization of heterojunction bipolar transistors using numerical simulation
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (2) , 233-239
- https://doi.org/10.1109/16.19921
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- High-frequency performance limitations of millimeter-wave heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1988
- The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHzIEEE Transactions on Electron Devices, 1987
- On the estimation of base transit time in AlGaAs/GaAs bipolar transistorsIEEE Electron Device Letters, 1987
- A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistorsIEEE Electron Device Letters, 1986
- Techniques for small-signal analysis of semiconductor devicesIEEE Transactions on Electron Devices, 1985
- Monte Carlo simulation of bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistorsIEEE Transactions on Electron Devices, 1983
- Reappraisal of the unconditional stability criteria for active 2-port networks in terms of S parametersIEEE Transactions on Circuits and Systems, 1976
- Power gain of transistors at high frequenciesSolid-State Electronics, 1962
- High-Frequency Power Gain of Junction TransistorsProceedings of the IRE, 1955