Orientation control of the silicon film on insulator by laser recrystallization
- 15 November 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (10) , 4178-4181
- https://doi.org/10.1063/1.339085
Abstract
We have studied the influence of the growth direction and the solidification speed on crystal quality of the silicon-on-insulator (SOI) film by laser recrystallization. In a 〈100〉 direction on a {100} Si substrate, lateral epitaxial growth of single-crystal regions from a seed extended as much as 1 mm. It was found that the crystalline orientation of the SOI film changes continuously from {100} toward {110}. These results indicated that the quality of the SOI film is strongly affected by the crystallographic arrangement of the growth front relative to the composition of {111} faceted planes. A new recrystallization method for large area SOI films was developed by stabilizing the growth front.This publication has 8 references indexed in Scilit:
- SOI/SOI/Bulk-Si triple-level structure for three-dimensional devicesIEEE Electron Device Letters, 1986
- Influence of as-deposited film structure on 〈100〉 texture in laser-recrystallized silicon on fused quartzApplied Physics Letters, 1984
- Solidification‐Front Modulation to Entrain Subboundaries in Zone‐Melting Recrystallization of Si on SiO2Journal of the Electrochemical Society, 1983
- Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater OvenJournal of the Electrochemical Society, 1982
- Use of selective annealing for growing very large grain silicon on insulator filmsApplied Physics Letters, 1982
- An Etch Pit Technique for Analyzing Crystallographic Orientation in Si FilmsJournal of the Electrochemical Society, 1982
- Temperature profiles induced by a scanning cw laser beamJournal of Applied Physics, 1982
- Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding ProcessJournal of the Electrochemical Society, 1981