Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics
- 1 March 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (3) , 335-339
- https://doi.org/10.1007/bf02661387
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Surface electronic states of low-temperature H-plasma cleaned Si(100)Applied Physics Letters, 1991
- Surface etching and roughening in integrated processing of thermal oxidesJournal of Vacuum Science & Technology A, 1991
- Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxyJournal of Electronic Materials, 1991
- Interface impurities of low-temperature (900 °C) deposited Si epitaxial films prepared by HF treatmentsApplied Physics Letters, 1990
- The Evolution of Silicon Wafer Cleaning TechnologyJournal of the Electrochemical Society, 1990
- Defect microchemistry in SiO2/Si structuresJournal of Vacuum Science & Technology A, 1990
- In-situ processing using rapid thermal chemical vapor depositionJournal of Electronic Materials, 1989
- Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)Journal of Applied Physics, 1987