Scanning electron microscope measurements on short channel MOS transistors
- 30 April 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (4) , 345-356
- https://doi.org/10.1016/0038-1101(80)90202-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Two-Dimensional Concentration Dependent DiffusionBell System Technical Journal, 1980
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971
- DIRECT MEASUREMENT OF THE DEPLETION LAYER WIDTH VARIATION VS APPLIED BIAS FOR A P-N JUNCTIONApplied Physics Letters, 1965
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955