MBE apparatus for i n s i t u grazing incidence x-ray diffraction
- 1 July 1989
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 60 (7) , 2362-2364
- https://doi.org/10.1063/1.1140772
Abstract
A molecular beam epitaxy (MBE) apparatus furnished with two E‐gun evaporators, two Knudsen cells and RHEED, was built for in situ grazing incidence x‐ray diffraction studies. By adopting horizontal sample setting geometry, the entire ultrahigh vacuum chamber was rotated simply with the aid of a spring, and a large sample area was irradiated by the x‐rays. Using this apparatus, we observed the 7×7 superstructure on a Si(111) surface and at a SiO2/Si(111) interface.Keywords
This publication has 10 references indexed in Scilit:
- Interfacial Superstructure of AlN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Developing a multipurpose SR beam line highly efficient in material characterizationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
- Observation of the superstructure at the Al–GaAs(001) interface by synchrotron x-ray diffractionJournal of Vacuum Science & Technology B, 1988
- Synchrotron X-ray diffraction study of an interfacial super-structure: a-Si on Ge0.2Si0.8 (111)-5×5Surface Science, 1987
- Ordering atand Si(111)/SiInterfacesPhysical Review Letters, 1986
- X-ray diffraction evidence of adatoms in the Si(111)7×7 reconstructed surfacePhysical Review B, 1986
- Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopyJournal of Vacuum Science & Technology A, 1985
- Apparatus for X-ray diffraction in ultrahigh vacuumNuclear Instruments and Methods in Physics Research, 1984
- A novel X-ray scattering diffractometer for studying surface structures under UHV conditionsNuclear Instruments and Methods in Physics Research, 1984
- X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interfaceJournal of Applied Physics, 1979