Composition dependence of polarization fields in GaInN/GaN quantum wells
- 5 August 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (6) , 1169-1171
- https://doi.org/10.1063/1.1601310
Abstract
We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization, utilizing the quantum confined Stark effect, with fields as large as 3.1 MV/cm at 22% In. From its dependence on quantum well composition and strain, we find that the total field in GaInN is a linear combination of polarization charges from GaN and InN. The piezoelectric constants for GaN and InN derived from our data are and in fair agreement with theoretical data.
Keywords
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