Microstructural Aspects of Nickel Silicide Formation in Evaporated Nickel-Silicon Multilayer Thin Films
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Amorphous silicide formation by thermal reaction: A comparison of several metal–silicon systemsJournal of Vacuum Science & Technology A, 1989
- Simultaneous planar growth of amorphous and crystalline Ni silicidesApplied Physics Letters, 1988
- Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous siliconApplied Physics Letters, 1987
- Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayersJournal of Applied Physics, 1987
- Early stages in thin film metal–silicon and metal–SiO2 reactions under rapid thermal annealing conditions: The rapid thermal annealing/transmission electron microscopy techniqueJournal of Vacuum Science & Technology B, 1986
- Interfacial Reactions in Titanium - Silicon MultilayersMRS Proceedings, 1986
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984
- Formation of an amorphous Rh-Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin filmsApplied Physics Letters, 1983
- Transmission electron microscopy of the formation of nickel silicidesPhilosophical Magazine A, 1982
- Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetryJournal of Applied Physics, 1981